Effect of ambient gas on pulsed laser deposition of group III nitrides

Thin Solid Films

Volumn 457, Issue 1, 2004, Pages 118-121

  Ito, S ^a   Fujioka, H ^a,b   Ohta, J ^a   Kobayashi, A ^a   Honke, T ^a   Miki, H ^c   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^c High Performance Materials Department   (Japan)

Author keywords

Growth mechanism; Hydrogen; Laser ablation; Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; HYDROGEN; KINETIC ENERGY; LASER ABLATION; LIGHT EMITTING DIODES; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; THIN FILMS; X RAY DIFFRACTION;

GAN FILMS; GROWTH MECHANISM; HYDROGEN ATOMS; NITROGEN-HYDROGEN FORMING;

GALLIUM NITRIDE;

EID: 2442476129     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.006     Document Type: Conference Paper

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