|
Volumn 5, Issue 7, 2007, Pages 422-425
|
Heteroepitaxial growth of InP/GaAs(100) by metalorganic chemical vapor deposition
a a a a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
ANNEALING;
EPITAXIAL GROWTH;
FULL WIDTH AT HALF MAXIMUM;
HETEROJUNCTIONS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
SEMICONDUCTING GALLIUM ARSENIDE;
SUPERLATTICES;
X RAY DIFFRACTION ANALYSIS;
HETEROEPITAXIAL GROWTH;
STRAINED LAYER SUPERLATTICE (SLS);
THERMAL CYCLE ANNEALING (TCA);
SEMICONDUCTING INDIUM PHOSPHIDE;
|
EID: 34547974898
PISSN: 16717694
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (6)
|
References (17)
|