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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 4913-4918

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

(5) Liao, Chin I a Yarn, Kao Feng b Lin, Chien Lien a Lin, Yu Lu a Wang, Yeong Her a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b FAR EAST UNIVERSITY (Taiwan)

Author keywords

Dislocations; GaAs; InP; Lattice mismatch; Metamorphic; MOVPE; Surface roughness

Indexed keywords

CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); MORPHOLOGY; PARTIAL PRESSURE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE ROUGHNESS;

METAMORPHIC STRUCTURE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0142012146 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.4913 Document Type: Article

Times cited : (14)

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