Achievement of high planarization efficiency in CMP of copper at a reduced down pressure

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 367-373

  Pandija, S ^a   Roy, D ^a   Babu, S V ^a  

^a CLARKSON UNIVERSITY   (United States)

Author keywords

CMP; Copper; Interconnect; Material processing

Indexed keywords

AMMONIUM COMPOUNDS; CONTACT ANGLE; COPPER; DISSOLUTION; NANOTECHNOLOGY; ORGANIC POLYMERS; PASSIVATION; SILICA;

AMMONIUM DODECYL SULFATES; BENZOTRIAZOLE; CHEMICAL-MECHANICAL PLANARIZATION; CMP; CMP SLURRIES; COMPLEXING AGENTS; COPPER LINES; CU LINES; DISSOLUTION RATES; DISSOLUTION-INHIBITING; DOWN PRESSURES; FUMED SILICA PARTICLES; INHIBITOR FILMS; INTERCONNECT; INTERCONNECT STRUCTURES; LAYER THICKNESS; LOW CONCENTRATIONS; LOW PRESSURES; LOW-K DIELECTRICS; MATERIAL PROCESSING; OPTICAL PROFILOMETRIES; PLANARIZATION EFFICIENCIES; POLISH RATES; STEP HEIGHTS; SURFACE DISSOLUTIONS;

SURFACES;

EID: 59049092518     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.11.047     Document Type: Article

References (50)

1. Zantye P.B., Kumar A., and Sikdar A.K. Mater. Sci. Eng. R45 (2004) 89
2. Jindal A., and Babu S.V. J. Electrochem. Soc. 151 (2004) G709
3. In: Babu S.V., Cadien K.C., and Yano H. (Eds). Chemical-Mechanical Polishing 2001: Advances and Future Challenges (2001), Materials Research Society, Warrendale
4. Gorantla V.R.K., Assiongbon K.A., Babu S.V., and Roy D. J. Electrochem. Soc. 152 (2005) G404
5. Li Z., Borucki L., and Philipossian A. J. Electrochem. Soc. 151 (2004) G482
6. Ramakrishnan S., Janjam S.V.S.B., Patri U.B., Roy D., and Babu S.V. Microelec. Eng. 84 (2006) 80
7. Hegde S., Patri U.B., and Babu S.V. J. Mater. Res. 20 (2005) 2553
8. Pandija S., Roy D., and Babu S.V. Mater. Chem. Phys. 102 (2007) 144
9. Gorantla V.R.K., Babel A., Pandija S., and Babu S.V. Electrochem. Solid State Lett. 8 (2005) G131
10. Gorantla V.R.K., Goia D., Matijević E., and Babu S.V. J. Electrochem. Soc. 152 (2005) G912
11. Hariharaputhiran M., Zhang J., Ramarajan S., Keleher J.J., Li Y., and Babu S.V. J. Electrochem. Soc. 147 (2000) 3822-3826
12. Gorantla V.R.K., Matijević E., and Babu S.V. Chem. Mater. 17 (2005) 2076
13. Lu J., Garland J.E., Pettit C.M., Babu S.V., and Roy D. J. Electrochem. Soc. 151 (2004) G717
14. Li Y., Hariharaputhiran M., and Babu S.V. J. Mater. Res. 16 (2001) 1066
15. Tsai T.-H., Wu Y.-F., and Yen S.-C. Microelec. Eng. 77 (2005) 193
16. Deshpande S., Kuiry S.C., Klimov M., Obeng Y., and Seal S. J. Electrochem. Soc. 151 (2004) G788
17. Luo Q., Campbell D.R., and Babu S.V. Thin Solid Films 311 (1997) 177
18. Luo Q., Mackay R.A., and Babu S.V. Chem. Mater. 9 (1997) 2101
19. S. Pandija, Y. Hong, V.K. Devarapalli, D. Roy, S.V. Babu, in: Proc. 11th International Symposium on Chemical-Mechanical Planarization, Lake Placid, NY, 2006, p. 7.
20. Hong Y., Devarapalli V.K., Roy D., and Babu S.V. J. Electrochem. Soc. 154 (2007) H444
21. Tregub A., Ng G., Sorooshian J., and Moinpour M. Thermochim. Acta 439 (2005) 44
22. Kakireddy V.R., Mudhivarthi S., and Kumar A. J. Vac. Sci. Technol. B 26 (2008) 141
23. Dominget A., Farkas J., and Szunerits S. Appl. Surf. Sci. 252 (2006) 7760
24. Nguyen V., Van Kranenburg H., and Woerlee P. Microelectron. Eng. 50 (2000) 403
25. Borucki L., Li Z., and Philipossian A. J. Electrochem. Soc. 159 (2004) G559
26. Hong Y., Patri U.B., Ramakrishnan S., Roy D., and Babu S.V. J. Mater. Res. 20 (2005) 3413
27. R.M. Smith, A.E. Martell, NIST Critically Selected Stability Constants of Metal Complexes Database Software, Version 8.0, May 2004.
28. Kallay N., and Matijević E. Langmuir 1 (1985) 195
29. Kummert R., and Stumm W. J. Colloid Interface Sci. 75 (1980) 373
30. Ihnfeldt R., and Talbot J.B. J. Electrochem. Soc. 153 (2006) G948
31. Hong Y., Roy D., and Babu S.V. Electochem. Solid State Lett. 8 (2005) G297
32. Burgess I., Zamlynny V., Szymanski G., and Lipkowski J. Langmuir 17 (2001) 3355
33. Burgess I., Jeffrey C.A., Cai X., Szymanski G., Galus Z., and Lipkowski J. Langmuir 15 (1999) 2607
34. Luo H., Guan Y.C., and Han K.N. Corrosion 54 (1998) 619
35. Yeung H., Chan H., and Weaver M.J. Langmuir 15 (1999) 3348
36. Sayed S.Y., El-Deab M.S., El-Anadouli B.E., and Ateya B.B. J. Phys. Chem. B 107 (2003) 5575
37. Bastidas J.M., Pinilla P., Cano E., Polo J.L., and Miguel S. Corros. Sci. 45 (2003) 427
38. Tromans D. J. Electrochem. Soc. 145 (1998) L42
39. Thomas R.R., Brusic V.A., and Rush B.M. J. Electrochem. Soc. 139 (1992) 678
40. Polewska W., Vogt M.R., Magnussen O.M., and Behm R.J. J. Phys. Chem. B 103 (1999) 10440
41. Walsh J.F., Dhariwal H.S., Gutiérrez-Sosa A., Finetti P., Muryn C.A., Brookes N.B., Oldman R.J., and Thornton G. Surf. Sci. 415 (1998) 423
42. Moroz M.Z., Miller A., Hawk J., Cadien K., and Li D.Y. Wear 255 (2003) 869
43. Fang B.S., Olson C.G., and Lynch D.W. Surf. Sci. 176 (1986) 476
44. Nilsson J.-O., Tornkvist C., and Liedberg B. Appl. Surf. Sci. 37 (1989) 306
45. Cohen S.L., Brusic V.A., Kaufman F.B., Frankel G.S., Motakef S., and Rush B. J. Vac. Sci. Technol. A 8 (1990) 2417
46. Nishi A., Sado M., Miki T., and Fukui Y. Appl. Surf. Sci. 203-204 (2003) 470
47. Zhang L., Raghavan S., and Weling M. J. Vac. Sci. Technol. B 17 (1999) 2248
48. Chen P.L., Chen J.H., Tsai M.S., Dai B.T., and Yeh C.F. Microelectron. Eng. 75 (2004) 352
49. Zhang G., Burdick G., Dai F., Bibby T., and Beaudoin S. Thin Solid Films 332 (1998) 379
50. Lin J.Y., West A.C., Wana C.C., and Wang Y.Y. Electrochem. Commun. 10 (2008) 677