Application of experimentally determined inelastic mean free path and surface excitation parameter in Ni to Monte Carlo simulation of reflection electron energy loss spectrum

Surface and Interface Analysis

Volumn 40, Issue 13, 2008, Pages 1755-1759

  Nagatomi, T ^a   Goto, K ^b  

^a OSAKA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Inelastic mean free path; Monte Carlo simulation; Reflection electron energy loss spectroscopy; Surface excitation parameter

Indexed keywords

ATOMS; DISSOCIATION; ELECTRON EMISSION; ELECTRON ENERGY ANALYZERS; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; ELECTRON SPECTROSCOPY; ELECTRONS; ENERGY DISSIPATION; MONTE CARLO METHODS; NUCLEAR INSTRUMENTATION; REELS; REFLECTION; SEMICONDUCTOR COUNTERS; SURFACES;

ELECTRON ENERGY LOSSES; ENERGY LOSSES; INELASTIC MEAN FREE PATH; MC SIMULATIONS; MONTE CARLO SIMULATION; REFLECTION ELECTRON ENERGY LOSS SPECTROSCOPY; SURFACE EXCITATION PARAMETER; SURFACE EXCITATIONS; SURFACE REGIONS;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 58449115229     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2983     Document Type: Article

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