Radiation effects on ohmic and Schottky contacts based on 4H and 6H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 1, 2009, Pages 87-90

  Çinar, Kübra ^a   Coşkun, Cevdet ^a   Gür, Emre ^a   Aydoǧan, Şakir ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

4H SiC; 6H SiC; Electron irradiation; Ohmic contact; Schottky diode

Indexed keywords

ATOMS; DIODES; ELECTRIC CONTACTORS; ELECTRONS; IRRADIATION; NICKEL; OHMIC CONTACTS; RADIATION; RADIATION EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; THERMIONIC EMISSION;

4H-SIC; 6H-SIC; CONTACT STRUCTURES; CURRENT TRANSPORT MECHANISMS; DISPLACEMENT DAMAGES; DONOR CONCENTRATIONS; ELECTRON ENERGIES; IDEALITY FACTORS; INDUCED DEFECTS; NI CONTACTS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODE; SPECIFIC CONTACT RESISTIVITIES; SYSTEMATIC STUDIES; TRAPPING EFFECTS;

ELECTRON IRRADIATION;

EID: 58349084505     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.10.087     Document Type: Article

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