Studies on the proton irradiation induced defects on Ni/n-GaAs Schottky barrier diodes

Physica B: Condensed Matter

Volumn 315, Issue 1-3, 2002, Pages 88-95

  Jayavel, P ^a   Santhakumar, K ^b   Kumar, J ^c  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^c ANNA UNIVERSITY   (India)

Author keywords

Annealing; Fluence; Irradiation; Schottky barrier diode; TRPL

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); IONS; LEAKAGE CURRENTS; LUMINESCENCE; NICKEL; PROTON IRRADIATION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS;

ION FLUENCES;

SCHOTTKY BARRIER DIODES;

EID: 0036535936     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01104-8     Document Type: Article

References (17)