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Journal of Crystal Growth

Volumn 194, Issue 3-4, 1998, Pages 286-291

Etching of GaAs by CCl4 and VCl4 in a metalorganic vapor-phase epitaxy reactor

(3) Rebey, A a Bchetnia, A a El Jani, B a

a FACULTÉ DES SCIENCES DE MONASTIR (Tunisia)

Author keywords

Carbon; CCl4; Etching; MOVPE; VCl4

Indexed keywords

CARBON TETRACHLORIDE; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTOR DOPING; VANADIUM COMPOUNDS;

VANADIUM CHLORIDE; VANADIUM DOPANT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032287845 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00606-X Document Type: Article

Times cited : (12)

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