Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)

Physical Review Letters

Volumn 101, Issue 15, 2008, Pages

  Ferralis, Nicola ^a   Maboudian, Roya ^a   Carraro, Carlo ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADJUSTING; ANNEALING TEMPERATURES; BAND DISPERSIONS; C/SI RATIOS; COEFFICIENTS OF THERMAL EXPANSIONS; COMPRESSIVE STRAINS; DELOCALIZED ELECTRONS; DIAMOND-LIKE CARBONS; EARLY STAGES; EPITAXIAL GRAPHENE; GRAPHENE; GRAPHENE LAYERS; GROWTH TIMES; LINEAR STRAINS; RAMAN SIGNALS; ROOM TEMPERATURES; SCATTERED LIGHT; SECOND ORDERS; STRUCTURAL STRAINS; SUBMONOLAYER;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; OLIGOMERS; RAMAN SPECTROSCOPY; SILICON; SILICON CARBIDE; THERMAL EXPANSION; THERMAL SPRAYING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54049100050     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.156801     Document Type: Article

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