Leakage mechanisms and dielectric properties of Al2O3/TiN-based metal-insulator-metal capacitors

Applied Physics Letters

Volumn 83, Issue 21, 2003, Pages 4429-4431

  Meng, Shuang ^a   Basceri, C ^a   Busch, B W ^a   Derderian, G ^a   Sandhu, G ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRODES; LEAKAGE CURRENTS; MIM DEVICES; TITANIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACIAL LAYERS; METAL INSULATOR METAL CAPACITORS;

CAPACITORS;

EID: 0346215983     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1629373     Document Type: Article

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