Surface roughness of molecular resist for EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Toriumi, Minoru ^a,b   Kaneyama, Koji ^a   Kobayashi, Shinji ^a   Itani, Toshiro ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b Laboratory for Interdisciplinary Science and Technology

Author keywords

AFM; EUV lithography; LER; Molecular resist; Resist; Surface roughness

Indexed keywords

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; FRICTION; METAL ANALYSIS; PHOTORESISTS; POLYMERS; POWER SPECTRUM; PULSE SHAPING CIRCUITS; SURFACE PROPERTIES; SURFACE ROUGHNESS; SURFACES; ULTRAVIOLET DEVICES;

AFM; EUV LITHOGRAPHY; LER; MOLECULAR RESIST; RESIST;

POWER SPECTRAL DENSITY;

EID: 57349143392     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772349     Document Type: Conference Paper

References (18)

1. Lin, Q., Sooriyakumaran, R., and Huang, W-S., "Toward Controlled Resist Line Edge Roughness: Material Origin of Line Edge Roughness in Chemically Amplified Positive-tone Resists," Proc. SPIE 3999, 230-239 (2000).
2. Fedynyshyn, T. H., Astolfi, D. K., Cabral, A., and Roberts, J., "PAG Segregation During Exposure Affecting Innate Material Roughness," Proc. SPIE 6519, 65190X1-65190X6 (2007).
3. Yamaguchi, A., Fukuda, H., Arai, T., Yamamoto, J., Hirayama, T., Shiono, D., Hata, Hideo, and Onodera, J., "Spectral analysis of line-edge roughness in polyphenol EB-resists and its impact on transistor performance," J. Vac. Sci. Technol., B23(6), 2711-2715 (2005).
4. Biafore, J. J., Smith, M. D., Robertson, S. A., and Graves, T., "Mechanistic Simulation of Line-Edge Roughness," Proc. SPIE 6519, 65190Y1-65190Y17 (2007).
5. Sanchez, M. I., Hinsberg, W. D., Houle, F. A., Hoffnagle, J. A., Ito, H., and Nguyen, C., "Aerial Image Contrast Using Interferometric Lithography: Effect on Line-Edge Roughness," Proc. SPIE 3678, 160-171 (1999).
6. Petrillo, K., Wei, Y., Brainard, R., Denbeaux, G., Goldfarb, D., Koay, C.-S., Mackey, J., Montgomery, W., Pierson, W., Wallow, T., and Wood, O., "Are extreme ultraviolet resists ready for the 32 nm node?", J. Vac. Sci. Technol., B25(6), 2490-2495 (2007).
7. He, D., Solak, H., Li, W., and Cerrina, F., "Extreme ultraviolet and x-ray resist: Comparison study," J. Vac. Sci. Technol., B17(6), 3379-3383 (1999).
8. Yamaguchi, T., Namatsu, H., Nagase, M., Yamazaki, K., and Kurihara, K., "Nanometer-scale linewidth fluctuations caused by polymer aggregates in resist films," Appl. Phys. Lett. 71 (16), 2388-2390 (1997).
9. Yamaguchi, T., Namatsu, H., Nagase, M., Kurihara, K., and Kawai, Y., "Line-edge roughness characterized by polymer aggregates in photoresists," Proc. SPIE 3678, 617-624 (1999).
10. La, Y.-H., Insik-In, Park, S. -M., Meagley, R. P., Leolukman, M., Gopalan, P., and Nealey, P. F., "Pixelated chemically amplified resists: Investigation of material structure on the spatial distribution of photoacids and line edge roughness," J. Vac. Sci. Technol., B25(6), 2508-2513 (2007).
11. Cutler, C. A., Mackevich, J. F. Li, J., O'Connell, D. J., Cardinale, G. and Brainard, R. L., "Effect of Polymer Molecular Weight on AFM Polymer Aggregate Size and LER of EUV Resists," Proc. SPIE 5037, 406-417 (2003).
12. Matsunaga, S., Aratani, L, Okabe, F., and Kitayama, M., "Observing morphology on surface of poly(methacrylate) in ArF lithography using AFM phase image," Proc. SPIE 6519, 65193W1-65193W8 (2007).
13. He, D., and Cerrina, F., "Process dependence of roughness in a positive-tone chemically amplified resist," J. Vac. Sci. Technol., B 16(6), 3748-3751 (1998).
14. Koh, H. P., Lin, Q. Y., Hu, X., and Chan, L., "Effect of Process Parameters on Pattern Edge Roughness of Chemically-amplified Resists," Proc. SPIE 3999, 240-251 (2000).
15. Constantoudis, V., Gogolides, E., Patsis, G. P., Tserepi, A., and Valamontes, E. S., "Characterization and simulation of surface and line-edge roughness in photoresists," J. Vac. Sci. Technol., B19(6), 2694-2698 (2001).
16. Masuda, S., Kamimura, S., Hirano S., Hoshino, W., and Mizutani, K., "The resist materials study for the outgassing reduction and LWR improvement in EUV lithography," Proc. SPIE 6519, 651901-6519010 (2007).
17. Patis, G. P., Glezos, N., Raptis, I., and Valamontes, E. S., "Simulation of roughness in chemically amplified resists using percolation theory," J. Vac. Sci. Technol., B17 (6), 3367-3370 (1999).
18. Ma, Y., Levinson, J., and Wallow, T., "Line Edge Roughness Impact on Critical Dimension Variation," Proc. SPIE 6518, 6518241-65182412 (2007).