The resist materials study for the outgassing reduction and LWR improvement in EUV lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6519, Issue PART 1, 2007, Pages

  Masuda, Seiya ^a   Kamimura, Sou ^a   Hirano, Shuuji ^a   Hoshino, Wataru ^a   Mizutani, Kazuyoshi ^a  

^a FUJIFILM CORPORATION   (Japan)

Author keywords

Chemical amplified resist; EUV lithography; LWR; Outgassing

Indexed keywords

DEGASSING; EXTREME ULTRAVIOLET LITHOGRAPHY; MOLECULAR WEIGHT; OPTIMIZATION; POLYMER MATRIX; QUENCHING; SENSITIVITY ANALYSIS;

ACETAL GROUP; CHEMICAL AMPLIFIED RESISTS; MICRO EXPOSURE TOOL (MET); PHOTO ACID GENERATORS;

PHOTORESISTS;

EID: 35148864083     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.711864     Document Type: Conference Paper

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