Spectral analysis of line-edge roughness in polyphenol EB-resists and its impact on transistor performance

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 6, 2005, Pages 2711-2715

  Yamaguchi, Atsuko ^a   Fukuda, Hiroshi ^a   Arai, Tadashi ^a   Yamamoto, Jiro ^a   Hirayama, Taku ^b   Shiono, Daiju ^b   Hada, Hideo ^b   Onodera, Junichi ^b  

^a HITACHI LTD   (Japan)

^b TOKYO OHKA KOGYO CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LITHOGRAPHY; PHENOLS; SURFACE ROUGHNESS; THRESHOLD VOLTAGE; TRANSISTORS;

DEVICE SIMULATION; LINE-EDGE ROUGHNESS (LER); POLYPHENOL RESINS; TRANSISTOR WIDTH;

SPECTRUM ANALYSIS;

EID: 29044434600     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2110318     Document Type: Article

References (27)

1. H.-W. Kim, J.-Y. Lee, J. Shin, S.-G. Woo, H.-K. Cho, and J.-T. Moon, IEEE Trans. Electron Devices 51, 1984 (2004).
2. P. Oldiges, Q. Lin, K. Petrillo, M. Sanchez, M. Ieong, and M. Hargrove, SISPAD, 2000, p. 131.
3. K. Patterson, J. L. Sturtevant, J. Alvis, N. Benavides, D. Bonser, N. Cave, C. Nelson-Thomas, B. Taylor, and K. Turnquest, Proc. SPIE 4344, 809 (2001).
4. K. K. Young, S. Y. Wu, C. H. Wang, C. T. Lin, J. Y. Cheng, M. Chiang, S. H. Chen, T. C. Lo, Y. S. Chen, J. H. Chen, L. J. Chen, S. Y. Hou, J. J. Liaw, T. E. Chang, C. S. Hou, J. Shih, S. M. Jeng, H. C. Hsieh, Y. Ku, T. Yen, H. Tao, L. C. Chao, S. Shue, S. M. Jang, T. C. Ong, C. H. Yu, M. S. Liang, C. H. Diaz, and J. Y. C. Sun, Tech. Dig. - Int. Electron Devices Meet. 2000, 563 (2000).
5. C. H. Diaz, H. Tao, Y. Ku, A. Yen, and K. Young, IEEE Electron Device Lett. 22, 287 (2001).
6. S. Xiong, J. Bokor, Q. Xiang, P. Fisher, I. Dudley, and P. Rao, Proc. SPIE 4689, 733 (2002).
7. T. Linton, M. Chandhok, B. J. Rice, and G. Schrom, Tech. Dig. - Int. Electron Devices Meet. 2002, 303 (2002).
8. J. A. Croon, G. Storms, S. Winkelmeier, I. Pollentier, M. Ercken, S. Decoutere, Q. Sansen, and H. E. Maes, Tech. Dig. - Int. Electron Devices Meet. 2002, 307 (2002).
9. K. Shibata, N. Izumi, and K. Tsujita, Proc. SPIE 5375, 865 (2004).
10. A. Yamaguchi, R. Tsuchiya, H. Fukuda, O. Komuro, H. Kawada, and T. Iizumi, Proc. SPIE 5038, 689 (2003).
11. A. Yamaguchi, K. Ichinose, S. Shimamoto, H. Fukuda, R. Tsuchiya, K. Ohnishi, H. Kawada, and T. Iizumi, Proc. SPIE 5375, 468 (2004).
12. J. Y. Lee, J. Shin, H. W. Kim, S. G. Woo, H. K. Cho, W. S. Han, and J. T. Moon, Proc. SPIE 5376, 426 (2004).
13. S. Xiong, J. Bokor, Q. Xiang, P. Fisher, I. Dudley, P. Rao, H. Wang, and B. En, IEEE Trans. Semicond. Manuf. 17, 357 (2004).
14. H. Fukutome, Y. Momiyama, T. Kubo, Y. Tagawa, T. Aoyama, and H. Arimoto, Tech. Dig. - Int. Electron Devices Meet. 2004, 433 (2004).
15. For example, H. Fukuda, Jpn. J. Appl. Phys., Part 1 42, 3748 (2003).
16. T. Hirayama, D. Shiono, S. Matsumaru, T. Ogata, H. Hada, J. Onodera, T. Arai, T. Sakamizu, A. Yamaguchi, H. Shiraishi, H. Fukuda, and M. Ueda, Jpn. J. Appl. Phys. (in press).
17. T. Ohfuji, M. Endo, and H. Morimoto, Proc. SPIE 3678, 732 (1999).
18. G. Eytan, O. Dror, L. Ithier, B. Florin, Z. Lamouchi, and N. Martin, Proc. SPIE 4689, 347 (2002).
19. A. Yamaguchi and O. Komuro, Jpn. J. Appl. Phys., Part 1 42, 3763 (2003).
20. A. Yamaguchi, H. Fukuda, H. Kawada, and T. Iizumi, J. Photopolym. Sci. Technol. 16, 387 (2003).
21. B. D. Bunday, M. Bishop, J. S. Villarrubia, and A. E. Vladar, Proc. SPIE 5038, 674 (2003).
22. V. Constantoudis, G. P. Pastis, and E. Gogolodes, Proc. SPIE 5038, 901 (2003).
23. L. H. A. Leunissen, W. G. Lawrence, and M. Ercken, Microelectron. Eng. 73, 265 (2004).
24. V. Constantoudis, G. Patsis, L. H. A. Leunissen, and E. Gogolides, Proc. SPIE 5375, 967 (2004).
25. B. D. Bunday, M. Bishop, D. McCormack, J. S. Villarrubia, A. E. Vladar, R. Dixon, T. Vorburger, and N. G. Orji, Proc. SPIE 5375, 515 (2004).
26. T. Marschner, A. Lee, S. Fuchs, L. Volkel, and C. Stief, Proc. SPIE 5375, 477 (2004).
27. J. Yamamoto, S. Uchino, H. Ohta, T. Yoshimura, and F. Murai, J. Vac. Sci. Technol. B 15, 2868 (1997).