Are extreme ultraviolet resists ready for the 32 nm node?

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2490-2495

  Petrillo, Karen ^a   Wei, Yayi ^b,h   Brainard, R ^c   Denbeaux, G ^c   Goldfarb, Dario ^d   Koay, C S ^a   MacKey, J ^e   Montgomery, Warren ^c   Pierson, W ^f   Wallow, T ^g   Wood, Obert ^g  

^a IBM   (United States)

^b Qimonda North America   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

^d IBM T J WATSON RESEARCH CENTER   (United States)

^e MICRON TECHNOLOGY INC   (United States)

^f ASML US Inc   (United States)

^g ADVANCED MICRO DEVICES   (United States)

^h AZ Electronic Materials USA Corp   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LINE EDGE ROUGHNESS;

EXTREME ULTRAVIOLET LITHOGRAPHY; INTERFEROMETERS;

PHOTORESISTS;

EID: 37149008374     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2787815     Document Type: Article

References (12)

1. ITRS (www.itrs.net).
2. G. Gallatin, Proc. SPIE 5754, 38 (2004).
3. C. Lee, M. Wang, N. Jarnagin, K. Gonsalves, J. Roberts, W. Yueh, and C. Henderson, Proc. SPIE 6519, 6519E (2007).
4. G. Gallatin, P. Neaulleau, and R. Brainard, Proc. SPIE 6519, 651911 (2007).
5. Presented at the IEUVI Resist TWG Teleconference, 2006 (unpublished).
6. T. Aoki and K. Murakami, presented at the IEUVI Resist TWG, Barcelona, Spain, 2006 (unpublished).
7. K. R. Dean, K. E. Gonsalves, and M. Thiyagarajan, Proc. SPIE 6153, 61531E (2006).
8. G. Denbeaux, R. Garg, L. Yankulin, and K. Dean, presented at the EUV Symposium, Barcelona, Spain, 2006 (unpublished).
9. G. Denbeaux, Proc. SPIE 6533, 653318 (2007).
10. P. Naulleau, Proc. SPIE 6151, 61510Y (2006).
11. D. Van Steenwinckel, J. H. Lammers, L. H. A. Leunissen, and J. A. J. M. Kwinten, Proc. SPIE 5753, 269 (2005).
12. H. Solak, Y. Ekinici, P. Kaser, and S. Park, J. Vac. Sci. Technol. B 25, 91 (2007).