메뉴 건너뛰기




Volumn 7273, Issue , 2009, Pages

PAG segregation during exposure affecting innate material roughness

Author keywords

Linewidth roughness; PAG; Photoresist; Polymer

Indexed keywords

AFM; DISSOLUTION RATES; HYDROXYSTYRENE; INHOMOGENEITY; LINEWIDTH ROUGHNESS; NANO SCALE; NON-POLYMERIC; PAG;

EID: 65849287308     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.814811     Document Type: Conference Paper
Times cited : (22)

References (21)
  • 1
    • 0033691379 scopus 로고    scopus 로고
    • Lithography and line-edge roughness of high-activation-energy resists
    • Masuda, S., Ma, X., Nova, G., and Pawlowski, G.," Lithography and line-edge roughness of high-activation-energy resists," Proc. SPIE 3999, 252 (2000).
    • (2000) Proc. SPIE , vol.3999 , pp. 252
    • Masuda, S.1    Ma, X.2    Nova, G.3    Pawlowski, G.4
  • 2
    • 24644487409 scopus 로고    scopus 로고
    • Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography
    • Reynolds, G. W., and Taylor, J. W., "Factors contributing to sidewall roughness in a positive-tone, chemically amplified resist exposed by x-ray lithography," J. Vac. Sci. Technol. B 17, 334 (1999).
    • (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 334
    • Reynolds, G.W.1    Taylor, J.W.2
  • 3
    • 0033690380 scopus 로고    scopus 로고
    • Toward controlled resist line edge roughness: Material origin of line edge roughness in chemically amplified positive-tone resists
    • Lin, Q., Sooriyakumaran, R., and Huang, W-S., "Toward controlled resist line edge roughness: material origin of line edge roughness in chemically amplified positive-tone resists," Proc. SPIE 3999, 230 (2000).
    • (2000) Proc. SPIE , vol.3999 , pp. 230
    • Lin, Q.1    Sooriyakumaran, R.2    Huang, W.-S.3
  • 4
    • 0038929412 scopus 로고    scopus 로고
    • Extreme ultraviolet and x-ray resist: Comparison study
    • He, D., Solak, H., Li, W., and Cerrina, F., "Extreme ultraviolet and x-ray resist: comparison study," J. Vac. Sci. Technol. B, 17, 3379 (1999).
    • (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 3379
    • He, D.1    Solak, H.2    Li, W.3    Cerrina, F.4
  • 5
    • 17344380477 scopus 로고    scopus 로고
    • Influence of polymer phase separation on roughness of resist features in UVIII
    • Yasin, S., Khalid, M. N., Hasko, D. G., and Ahmed, H., "Influence of polymer phase separation on roughness of resist features in UVIII," Microelectron. Eng. 73-74, 259 (2004).
    • (2004) Microelectron. Eng. , vol.73-74 , pp. 259
    • Yasin, S.1    Khalid, M.N.2    Hasko, D.G.3    Ahmed, H.4
  • 6
    • 0000984931 scopus 로고    scopus 로고
    • Microroughness of polymer thin films studied by total-reflection x-ray fluorescence and atomic force microscopy
    • Wu W. L., and Wallace, W. E., "Microroughness of polymer thin films studied by total-reflection x-ray fluorescence and atomic force microscopy," J. Vac. Sci. Technol. B 16, 1958 (1998).
    • (1998) J. Vac. Sci. Technol. B , vol.16 , pp. 1958
    • Wu, W.L.1    Wallace, W.E.2
  • 9
    • 33751157328 scopus 로고
    • Influence of polymer structure on the miscibility of photoacid generators
    • Uhrich, K. E., Reichmanis, E., and Baiocchi, F. A., "Influence of polymer structure on the miscibility of photoacid generators," Chem. Mater. 6, 295 (1994).
    • (1994) Chem. Mater. , vol.6 , pp. 295
    • Uhrich, K.E.1    Reichmanis, E.2    Baiocchi, F.A.3
  • 15
    • 35148835285 scopus 로고    scopus 로고
    • PAG segregation during exposure affecting innate material roughness
    • Fedynyshyn, T. H., Astolfi, D. K., Cabral, A., and Roberts, J. M., "PAG segregation during exposure affecting innate material roughness," Proc. SPIE 6519, 65190X (2007).
    • (2007) Proc. SPIE , vol.6519
    • Fedynyshyn, T.H.1    Astolfi, D.K.2    Cabral, A.3    Roberts, J.M.4
  • 17
    • 0035414101 scopus 로고    scopus 로고
    • Preparation of a photoacid generating monomer and its application in lithography
    • Wu, H., and Gonsalves, K. E., "Preparation of a photoacid generating monomer and its application in lithography," Adv. Funct. Mat. 11, 271 (2001).
    • (2001) Adv. Funct. Mat. , vol.11 , pp. 271
    • Wu, H.1    Gonsalves, K.E.2
  • 20
    • 27744473875 scopus 로고    scopus 로고
    • Design and performance of EUV resist containing photoacid generator for sub-100 nm Lithography
    • DOI 10.1166/jnn.2005.174
    • [20] Thiyagarajan, M., Dean, K., and Gonsalves, K. E., "Improved lithographic performance for EUV resists based on polymers having a photoacid generator (PAG) in the backbone," J. Photopolym. Sci. Tech. 18, 737 (2005). (Pubitemid 44502174)
    • (2005) Journal of Nanoscience and Nanotechnology , vol.5 , Issue.7 , pp. 1181-1183
    • Thiyagarajan, M.1    Gonsalves, K.E.2    Dean, K.3    Sykes, E.C.H.4
  • 21
    • 33749564137 scopus 로고    scopus 로고
    • Novel anionic photoacid generators (PAGs) and corresponding PAG bound polymers
    • DOI 10.1002/marc.200600330
    • [21] Wang, M., Jarnagin, N. D., Lee, C. T., Henderson, C. L., Yueh, W., Roberts, J. M., and Gonsalves, K. E., "Novel polymeric anionic photoacid generators (PAGs) and corresponding polymers for 193 nm lithography," J. Mater. Chem. 16, 3701 (2006). (Pubitemid 44535780)
    • (2006) Macromolecular Rapid Communications , vol.27 , Issue.18 , pp. 1590-1595
    • Wang, M.1    Gonsalves, K.E.2    Wang, Y.3    Roberts, J.M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.