Improved room-temperature 1.6μm electroluminescence from p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes

Applied Physics Express

Volumn 1, Issue 2, 2008, Pages

  Suzuno, Mitsushi ^a   Murase, Shigemitsu ^a   Koizumi, Tomoaki ^a   Suemasu, Takashi ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALS; DIODES; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; SILICON;

ACTIVE LAYERS; DOPED SI; DOUBLE HETEROSTRUCTURES; ELECTROLUMINESCENCE INTENSITIES; EPITAXIALLY GROWN; EXTERNAL QUANTUM EFFICIENCIES; LIGHT EMITTING DIODE LEDS; MOLECULAR-BEAM EPITAXIES; ROOM TEMPERATURES; SI(111) SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 57049121790     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.021403     Document Type: Article

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