Molecular beam epitaxy of highly [100]-oriented β-FeSi2 films on lattice-matched strained-Si(001) surface using Si0.7Ge 0.3 layers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 7 B, 2004, Pages

  Saito, Tatsuma ^a   Suemasu, Takashi ^b   Yamaguchi, Kenji ^b   Mizushima, Kazuki ^a   Hasegawa, Fumio ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b MITSUBISHI MATERIALS CORPORATION   (Japan)

Author keywords

FeSi2; CMP; MBE; SiGe; Template

Indexed keywords

ABSORPTION; CRYSTAL LATTICES; CRYSTAL ORIENTATION; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL FIBERS; OPTOELECTRONIC DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

BETA FERROUS SILICATE; CMP; LATTICE MATCHING; SILICON GERMENATE;

THIN FILMS;

EID: 4644221856     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.L957     Document Type: Article

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