Photovoltaic properties of n-type β-FeSi2/p-type Si heterojunctions

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 25-28, 2007, Pages

  Shaban, Mahmoud ^a   Nakashima, Kazuhiro ^a   Yoroyama, Wataru ^a   Yoshitare, Tsuyoshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Direct epitaxial growth; Iron disilicide; Solar cell; Sputtering; Thin film

Indexed keywords

CURRENT DENSITY; PHOTOVOLTAIC CELLS; SHORT CIRCUIT CURRENTS; SILICON; SOLAR CELLS;

DEPLETION REGION; DIRECT EPITAXIAL GROWTH; IRON DISILICIDE; PHOTOGENERATED CARRIERS;

HETEROJUNCTIONS;

EID: 34547842321     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L667     Document Type: Article

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