Indirect optical absorption of single crystalline β-FeSi2

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 1937-1939

  Udono, Haruhiko ^a   Kikuma, Isao ^a   Okuno, Tsuyoshi ^b   Masumoto, Yasuaki ^b   Tajima, Hiroyuki ^c  

^a IBARAKI UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; BINDING ENERGY; COLLOIDS; ELECTROLUMINESCENCE; ELECTRONIC STRUCTURE; EXCITONS; GERMANIUM; IRON COMPOUNDS; LIGHT ABSORPTION; LIGHT EMITTING DIODES; PHONONS; PROBABILITY; REFLECTION; SILICON;

ABSORPTION COEFFICIENTS; ABSORPTION SPECTRA; DIRECT BAND GAPS; PHONON-ASSISSTED TRANSITIONS;

SINGLE CRYSTALS;

EID: 5444229990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790590     Document Type: Article

References (23)

1. M. C. Bost and J. E. Mahan, J. Appl. Phys. 58, 2696 (1985).
2. M. C. Bost and J. E. Mahan, J. Appl. Phys. 64, 2034 (1988).
3. D. Leong, M. Harry, K. J. Resson, and K. P. Homewood, Nature (London) 387, 686 (1997).
4. T. Suemasu, Y. Negishi, K. Takakura, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 39, L101 (2000).
5. S. Chu, T. Hirohada, K. Nakajima, H. Kan, and T. Hiranuma, Jpn. J. Appl. Phys., Part 2 41, L1200 (2002).
6. Z. Yang, K. P. Homewood, M. Finney, M. harry, and K. J. Resson, Jpn. J. Appl. Phys., Part 1 78, 1958 (1995).
7. D. Tassis, C. Mitsas, T. Zorba, M. Angelakeris, C. Dimitriadis, O. Valassiades, D. Siapkas, and G. Kiriakidis, Appl. Surf, Sci. 102, 178 (1996).
8. H. Katsumata, Y Makita, N. Kobayashi, M. Hasegawa, H. Shibata, and S. Uekusa, Thin Solid Films 281-282, 252 (1996).
9. M. Ožvold, V. Gašparlk, and M. Dubnička, Thin Solid Films 295, 147 (1997).
10. M. Tanaka, Y. Kumagai, T. Suemasu, and F. Hasegawa, Jpn. J. Appl. Phys., Part 1 36, 3620 (1997).
11. Y. Maeda, T. Akita, K. Umezawa, K. Miyake, and M. Sagawa, Proc. SPIE 3419, 354 (1998).
12. M. Rebien, W. Henrion, U. Müller, and S. Gramlich, Appl. Phys. Lett. 74, 970 (1999).
13. H. Lange, W. Henrion, B. Sell, G. Reinsperger, G. Oertel, and H. Känel, Appl. Surf. Sci. 102, 169 (1996).
14. A. Filonov, D. Migas, V. Shaposhnikov, N. Dorozhkin, G. Petrov, H. Henrion, and H. Lange, J. Appl. Phys. 79, 7708 (1996).
15. K. Takakura, N. Hiroi, T. Suemasu, S. F. Chichibu, and F. Hasegawa, Appl. Phys. Lett. 80, 556 (2002).
16. H. Udono and I. Kikuma, Jpn. J. Appl. Phys., Part 2 39, L225 (2000).
17. H. Udono and I. Kikuma, Jpn. J. Appl. Phys., Part 1 40, 1367 (2001).
18. H. Udono and I. Kikuma, Jpn. J. Appl. Phys., Part 2 41, L583 (2002).
19. P. J. Dean and D. G. Thomas, Phys. Rev. 150, 690 (1966).
20. T. P. MacLean, Progress in Semiconductors (Wiley, New York, 1960), Vol. 5, p. 55.
21. G. G. Macfarlane, T. P. McLean, J. P. Quarrington, and V. Roberts, Phys. Rev. 111, 1245 (1958).
22. R. J. Elliott, Phys. Rev. 108, 1384 (1957).
23. G. Guizzetti, F. Marabelli, M. Patrini, P. Pellegrion, B. Pivac, L. Miglio, V Meregalli, H. Lange, W. Henrion, and V. Tomm, Phys. Rev. B 55, 1429 (1997).