Photovoltaic properties of ion-beam synthesized β-FeSi2/n-Si heterojunctions

Thin Solid Films

Volumn 381, Issue 2, 2001, Pages 256-261

  Maeda, Yoshihito ^a   Umezawa, Kenji ^a   Hayashi, Yoshikazu ^a   Miyake, Kiyoshi ^b   Ohashi, Kenya ^c  

^a Osaka Prefecture University   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; ION BEAMS; ION IMPLANTATION; PHOTOVOLTAIC EFFECTS; POLYCRYSTALLINE MATERIALS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; SYNTHESIS (CHEMICAL);

ION BEAM SYNTHESIS; OPEN-CIRCUIT VOLTAGES;

SEMICONDUCTING FILMS;

EID: 0035155567     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01753-3     Document Type: Article

References (15)

1. 2 at 10 K.
2. Lange H. Phys. Stat. Sol. (B). 201:1997;3.
3. K. Miyake, Y. Makita, Thin Solid Films (in press).
4. Lefki K., Muret P. J. Appl. Phys. 74:1993;1138.
5. Lefki K., Muret P. Appl. Surf. Sci. 65/66:1993;772.
6. Muret P., Lefki K., Nguyen T.T.A., Cola A., Ali I. Semicond. Sci. Technol. 9:1994;1395.
7. Arushanov E., Bucher E., Kloc Ch., Kulikova O., Kulyuk L., Siminel A. Phys. Rev. B52:1995;20.
8. Shen Z., Tang W.G., Li Z.Y., Shen S.C., Wang L.W. Phys. Stat. Sol. (B). 187:1995;511.
9. Maeda Y., Umezawa K., Miyake K., Sagawa M. Proc. SPIE 'Optoelectronic Materials and Devices'. 3419:1998;354.
10. Y. Maeda, K. Umezawa, K. Miyake, IEEE Trans. (in press).
11. Maeda Y., Umezawa K., Miyake K. Proc. MRS. 486:1998;329.
12. M. Sugiyama, Y. Maeda, Thin Solid Films (in press).
13. Pankove J.I. Optical Processes in Semiconductors. 1971;Dover Publications, New York.
14. Yang Z., Shao G., Homewood K.P. Appl. Phys. Lett. 68:1996;1784.
15. Adda Y., Philibert J. Prerrin F. Data cited in 'La Diffusion dans les Solides'. 1996;1966 Presses Universitaires de France, Paris.