CVD growth of InGaN nanowires

Journal of Alloys and Compounds

Volumn 467, Issue 1-2, 2009, Pages 472-476

  Cai, X M ^a   Ye, F ^b   Jing, S Y ^a   Zhang, D P ^a   Fan, P ^a   Xie, E Q ^b  

^a SHENZHEN UNIVERSITY   (China)

^b LANZHOU UNIVERSITY   (China)

Author keywords

Nanostructured materials; Nitride materials; Scanning electron microscopy, SEM; Vapor deposition

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRIC WIRE; GROWTH TEMPERATURE; INDIUM; MICROSCOPIC EXAMINATION; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; SCANNING; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; VAPORS; X RAY ANALYSIS;

ENERGY DISPERSIVE; GASFLOW RATES; MORPHOLOGY CHANGES; NITRIDE MATERIALS; STARTING MATERIALS; TRANSMISSION ELECTRONS; X-RAY DIFFRACTIONS;

CHEMICAL VAPOR DEPOSITION;

EID: 56949098942     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2007.12.018     Document Type: Article

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