Fabrication and photoluminescence of InGaN-based nanorods fabricated by plasma etching with nanoscale nickel metal Islands

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 4, 2006, Pages 1909-1912

  Huang, H W ^a   Chu, J T ^a   Hsueh, T H ^a   Ou Yang, M C ^a   Kuo, H C ^a   Wang, S C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; NANOTECHNOLOGY; NICKEL; PHOTOLUMINESCENCE; PLASMA ETCHING; QUANTUM THEORY; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

FIELD-EMISSION SCANNING ELECTRON MICROSCOPY; NANORODS; NICKEL METAL ISLANDS; PLASMA DRY-ETCHING;

NANOSTRUCTURED MATERIALS;

EID: 33746492295     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2221317     Document Type: Article

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