Growth of ultra small self-assembled InGaN nanotips

Journal of Crystal Growth

Volumn 263, Issue 1-4, 2004, Pages 63-67

  Ji, L W ^a   Su, Y K ^a   Chang, S J ^a   Fang, T H ^b   Wen, T C ^a   Hung, S C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A1. Atomic force microscopy; A1. Nanotips; A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; FIELD EMISSION DISPLAYS; FILM GROWTH; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS;

FED; INGAN; NANOTIPS;

EPITAXIAL GROWTH;

EID: 1242263900     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.11.076     Document Type: Article

References (23)

1. Nakamura S., Mukai T., Senoh M. J. Appl. Phys. 76:1994;8189.
2. Ponce F.A., Bour D.P. Nature. 386:1997;351.
3. Akasaki H., Amano J. Crystal Growth. 175/176:1997;29.
4. Nakamura S. Science. 281:1998;956.
5. Khalfallah S., Gorecki C., Podlecku J., Nishioka M., Kawakatsu H., Arakawa Y. Appl. Phys. A. 71:2000;223.
6. Terada Y., Yoshida H., Urushido T., Miyake H., Hiramatsu K. Jpn. J. Appl. Phys. 41:2002;L1194.
7. Muthukumar S., Sheng H., Zhong J., Zhang Z., Emanetoglu N.W., Lu Y. IEEE Tran. Nanotechnol. 2:2003;50.
8. Han W., Fan S., Li Q., Hu Y. Science. 277:1997;1287.
9. Han W., Redlich P., Ernst F., Rühle M. Appl. Phys. Lett. 76:2000;652.
10. Yoshida H., Urushido T., Miyake H., Hiramatsu K. Jpn. J. Appl. Phys. 40:2001;L1301.
11. Tang C.C., Fang S.S., Dang H.Y., Li P., Liu Y.M. Appl. Phys. Lett. 77:2000;1961.
12. Bae S.Y., Seo H.W., Park J., Yang H., Kim H., Kim S. Appl. Phys. Lett. 82:2003;4564.
13. Tu L.W., Hsiao C.L., Chi T.W., Lo I. Appl. Phys. Lett. 82:2003;1601.
14. Chang S.J., Lee M.L., Sheu J.K., Lai W.C., Su Y.K., Chang C.S., Kao C.J., Chi G.C., Tsai J.M. IEEE Electron. Dev. Lett. 24:2003;212.
15. Chang S.J., Kuo C.H., Su Y.K., Wu L.W., Sheu J.K., Wen T.C., Lai W.C., Chen J.F., Tsai J.M. IEEE J. Sel. Top. Quan. Electron. 8:2002;744.
16. Chang S.J., Lai W.C., Su Y.K., Chen J.F., Liu C.H., Liaw U.H. IEEE J. Sel. Top. Quan. Electron. 8:2002;278.
17. Lai W.C., Chang S.J., Yokoyama M., Sheu J.K., Chen J.F. IEEE Photon. Technol. Lett. 13:2001;559.
18. Tanaka S., Iwai S., Aoyagi Y. Appl. Phys. Lett. 69:1996;4096.
19. Tachibana K., Someya T., Arakawa Y. Appl. Phys. Lett. 74:1999;383.
20. Adelmann C., Simon J., Feuillet G., Pelekanos N.T., Daudin B. Appl. Phys. Lett. 76:2000;1570.
21. Ji L.W., Su Y.K., Chang S.J., Wu L.W., Fang T.H., Chen J.F., Tsai T.Y., Xue Q.K., Chen S.C. J. Crystal Growth. 149:2003;144.
22. Moll N., Scheffler M., Pehlke E. Phys. Rev. B. 58:1998;4566.
23. Shchukin V.A., Bimberg D., Munt T.P., Jesson D.E. Phys. Rev. Lett. 90:2003;076102.