The growth and field electron emission of InGaN nanowires

Journal of Crystal Growth

Volumn 304, Issue 2, 2007, Pages 333-337

  Ye, F ^a   Cai, X M ^b   Wang, X M ^a   Xie, E Q ^a  

^a LANZHOU UNIVERSITY   (China)

^b SHENZHEN UNIVERSITY   (China)

Author keywords

A1. InGaN nanowires; A3. Chemical vapor deposition processes; B3. Field electron emission

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTRON EMISSION; GROWTH (MATERIALS); INDIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

FIELD ELECTRON EMISSION; HEXAGONAL PHASES; INGAN NANOWIRES;

NANOWIRES;

EID: 34248575099     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.12.072     Document Type: Article

References (30)

1. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Lu H., Schaff W.J., Saito Y., and Nanishi Y. Appl. Phys. Lett. 80 (2002) 3967
2. Matsuoka T., Okamoto H., Nakao M., Harima H., and Kurimoto E. Appl. Phys. Lett. 81 (2002) 1246
3. Hori M., Kano K., Yamaguchi T., Saito Y., Araki T., Nanishi Y., Teraguchi N., and Suzuki A. Phys. Status Solidi (b) 234 (2002) 750
4. Johnson M.C., Lee C.J., Bourret-Courchesne E.D., Konsek S.L., Aloni S., Han W.Q., and Zettl A. Appl. Phys. Lett. 85 (2004) 5670
5. Xu Z., Bai X.D., Wang E.G., and Wang Z.L. Appl. Phys. Lett. 87 (2005) 163106
6. Huang J.Y., Kempa K., Jo S.H., Chen S., and Ren Z.F. Appl. Phys. Lett. 87 (2005) 053110
7. Bonard J.M., Kind H., Stöckli T., and Nilsson L.-O. Solid-State Electron. 45 (2001) 893
8. Bonard J.M., Salvetat J.P., Stöckli T., Forr′o L., and Châtelain A. Appl. Phys. A 69 (1999) 245
9. Yoshimoto N., Matsuoka T., Sasaki T., and Katsui A. Appl. Phys. Lett. 59 (1991) 2251
10. Deguchi T., Shikanai A., Torii K., Sota T., Chichibu S., and Nakamura S. Appl. Phys. Lett. 72 (1998) 3329
11. Yang H.C., Kuo P.F., Lin T.Y., Chen Y.F., Chen K.H., Chen L.C., and Chyi J.-I. Appl. Phys. Lett. 76 (2000) 3712
12. Lin S.K., Wu K.T., Huang C.P., et al. J. Appl. Phys. 97 (2005) 046101
13. Singh R., Doppalapudi D., Moustakas T.D., and Romano L.T. Appl. Phys. Lett. 70 (1997) 1089
14. Cho Y.-H., Song J.J., Keller S., Minsky M.S., Hu E., Mishra U.K., and DenBaars S.P. Appl. Phys. Lett. 73 (1998) 1128
15. Kwon M.K., Park I.-K., Baek S.H., Kim J.Y., and Park S.J. J. Appl. Phys. 97 (2005) 106109
16. Kumakura K., Makimoto T., and Kobayashi N. J. Appl. Phys. 93 (2003) 3370
17. Kozawa T., Suzuki M., Taga Y., Gotoh Y., and Ishikwa J. J. Vac. Sci. Technol. B 16 (1998) 833
18. Sugino T., Hori T., Kimura C., and Yamamoto T. Appl. Phys. Lett. 78 (2001) 3229
19. Kimura C., Yamamoto T., Hori T., and Sugino T. Appl. Phys. Lett. 79 (2001) 4533
20. Ha B., Seo S.H., Cho J.H., Yoon C.S., Yoo J., Yi G.-C., Park C.Y., and Lee C.J. J. Phys. Chem. B 109 (2005) 11095
21. Cai X.M., Leung Y.H., Cheung K.Y., Tam K.H., Djurišic A.B., Xie M.H., Chen H.Y., and Gwo S. Nanotechnology 17 (2006) 2330
22. Schwenzer B., Meier C., Masala O., Seshadri R., DenBaars S.P., and Mishra U.K. J. Mater. Chem. 15 (2005) 1891
23. Shan W., Walukiewicz W., Haller E.E., Little B.D., and Song J.J. J. Appl. Phys. 84 (1998) 4452
24. Davydov V.Yu., Klochikhin A.A., Emtsev V.V., Ivanov S.V., Vekshin V.V., Bechstedt F., Furthmüler J., Harima H., Mudryi A.V., Hashimoto A., Yamamoto A., Aderhold J., Graul J., and Haller E.E. Phys. Status Solidi (b) 230 (2002) R4
25. Berishev I., Bensaoula A., Rusakova I., Karabutov A., Ugarov M., and Ageev V.P. Appl. Phys. Lett. 73 (1998) 1808
26. Zhi C.Y., Bai X.D., and Wang E.G. Appl. Phys. Lett. 86 (2005) 213108
27. Yamashita T., Hasegawa S., Nishida S., Ishimaru M., Hirotsu Y., and Asahi H. Appl. Phys. Lett. 86 (2005) 082109
28. Xu N.S., Chen Y., Deng S.Z., Chen J., Ma X.C., and Wang E.G. J. Phys. D: Appl. Phys. 34 (2001) 1597
29. Fowler R.H., and Nordheim L.W. Proc. R. Soc. London Ser. A 119 (1928) 173
30. Smith R.C., Carey J.D., Forrest R.D., and Silva S.R.P. J. Vac. Sci. Technol. B 23 (2005) 632