Characterization of InGaN/GaN multiple quantum well nanorods fabricated by plasma etching with self-assembled nickel metal nanomasks

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2661-2663

  Hsueh, Tao Hung ^a   Huang, Hung Wen ^a   Kao, Chih Chiang ^a   Chang, Ya Hsien ^a   Ou Yang, Miao Chia ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride (GaN); Inductively coupled plasma (ICP); Nanorods

Indexed keywords

CHARACTERIZATION; ETCHING; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; MASKS; NICKEL; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM NITRIDE (GAN); NANOMASKS; NANORODS; PHOTOLUMINESCENCE INTENSITY;

NANOSTRUCTURED MATERIALS;

EID: 21244478949     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2661     Document Type: Conference Paper

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