Pre-doping effects on Ni fully silicided metal gate on SiO 2 dielectric

Applied Surface Science

Volumn 255, Issue 5 PART 1, 2008, Pages 1744-1749

  Wang, Bao Min ^a   Ru, Guo Ping ^a   Jiang, Yu Long ^a   Qu, Xin Ping ^a   Li, Bing Zong ^a   Liu, Ran ^a  

^a ASIC and System   (China)

Author keywords

Flatband voltage (V FB ); Fully silicided (FUSI) metal gate; Interface trap; Spike activation anneal; Work function (WF)

Indexed keywords

CAPACITANCE; CAPACITORS; CHEMICAL ACTIVATION; DIELECTRIC MATERIALS; GATE DIELECTRICS; ION IMPLANTATION; LOW-K DIELECTRIC; SILICA; SILICIDES; WORK FUNCTION;

CHARACTERISTIC PEAKS; FLAT-BAND VOLTAGE; FORMING GAS ANNEALING; FULLY SILICIDED METAL GATE; HIGH FREQUENCY CAPACITANCE; HIGH-FREQUENCY C-V; INTERFACE TRAPS; SPIKE ACTIVATION ANNEAL;

NICKEL;

EID: 56949091719     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.06.024     Document Type: Article

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