Work function of Ni3Si2 on HfSixO y and SiO2 and its implication for Ni fully silicided gate applications

Applied Physics Letters

Volumn 90, Issue 3, 2007, Pages

  Kittl, J A ^a   O'sullivan, B J ^a   Kaushik, V S ^a   Lauwers, A ^a   Pawlak, M A ^a   Hoffmann, T ^a   Demeurisse, C ^a   Vrancken, C ^a   Veloso, A ^a   Absil, P ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; DIFFUSION; HAFNIUM COMPOUNDS; NICKEL COMPOUNDS; SILICON COMPOUNDS; THIN FILMS;

COMPOSITION RATIOS; DIELECTRIC INTERFACE; DIFFUSION COUPLES; WORK FUNCTION (WF);

GATES (TRANSISTOR);

EID: 33846457345     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2430687     Document Type: Article

References (17)

1. International Technology Roadmap for Semiconductors, http//www.itrs. net/
2. M. Qin, V. M. C. Poon, and S. C. H. Ho, J. Electrochem. Soc. 148, 271 (2001).
3. W. P. Maszara, Z. Krivokapic, P. King, J.-S. Goo, and M.-R. Lin, Tech. Dig. - Int. Electron Devices Meet. 2002, 367.
4. J. Kedzierski, D. Boyd, C. Cabral, P. Ronsheim, S. Zafar, P. M. Kozlowski, J. A. Ott, and M. Ieong, IEEE Trans. Electron Devices 52, 39 (2005).
5. J. Liu and D. L. Kwong, Appl. Phys. Lett. 88, 082105 (2006).
6. M. A. Pawlak, T. Janssens, A. Lauwers, A. Vantomme, W. Vandervorst, K. Maex, and J. A. Kittl, Appl. Phys. Lett. 87, 181910 (2005).
7. G. Pourtois, A. Lauwers, J. A. Kittl, L. Pantisano, B. Soree, S. De Gendt, W. Magnus, M. Heyns, and K. Maex, Microelectron. Eng. 80, 272 (2005).
8. K. Takahashi, K. Manabe, T. Ikarashi, N. Ikarashi, T. Hase, T. Yoshihara, H. Watanabe, T. Tatsumi, and Y. Mochizuki, Tech. Dig. - Int. Electron Devices Meet. 2004, 91.
9. J. A. Kittl, M. A. Pawlak, A. Lauwers, C. Demeurisse, K. Opsomer, K. G. Anil, C. Vrancken, M. J. H. van Dal, A. Veloso, S. Kubicek, P. Absil, K. Maex, and S. Biesemans, IEEE Electron Device Lett. 27, 34 (2006).
10. M. A. Pawlak, A. Lauwers, T. Janssens, K. G. Anil, K. Opsomer, K. Maex, A. Vantomme, and J. A. Kittl, IEEE Electron Device Lett. 27, 99 (2006).
11. N. Biswas, J. Gurganus, and V. Misra, Appl. Phys. Lett. 87, 171908 (2005).
12. J. A. Kittl, A. Lauwers, A. Veloso, T. Hoffmann, S. Kubicek, M. Niwa, M. J. H. van Dal, M. A. Pawlak, S. Brus, C. Demeurisse, C. Vrancken, P. Absil, and S. Biesemans, IEEE Electron Device Lett. 27, 966 (2006).
13. J. A. Kittl, A. Lauwers, T. Hoffmann, A. Veloso, S. Kubicek, M. Niwa, M. J. H. van Dal, M. A. Pawlak, C. Demeurisse, C. Vrancken, B. Brijs, P. Absil, and S. Biesemans, IEEE Electron Device Lett. 27, 647 (2006).
14. C. Lavoie, F. M. d'Heurle, C. Detavernier, and C. Cabral, Jr., Microelectron. Eng. 70, 144 (2003).
15. J. A. Kittl, A. Lauwers, M. A. Pawlak, M. van Dal, A. Veloso, K. G. Anil, G. Pourtois, C. Demeurisse, M. de Potter, C. Vrancken, and K. Maex, Microelectron. Eng. 82, 441 (2005).
16. V. S. Kaushik, B. J. O'Sullivan, G. Pourtois, N. Van Hoornick, A. Delabie, S. Van Elshocht, W. Deweerd, T. Schram, L. Pantisano, E. Rohr, L.-A. Ragnarsson, S. DeGendt, and M. Heyns, IEEE Trans. Electron Devices 53, 2627 (2006).
17. J. R. Hauser and K. Ahmed, Characterization and Metrology for ULSI Technology: 1998 International Conference, edited by, D. G. Seiler, A. C. Diebold, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and, E. J. Walters, (AIP, New York, 1998), pp. 235-239.