Full silicidation of silicon gate electrodes using nickel-terbium alloy for MOSFET applications

Journal of the Electrochemical Society

Volumn 153, Issue 4, 2006, Pages

  Lim, Andy Eu Jin ^a   Lee, Rinus Tek Po ^a   Tung, Chih Hung ^b   Tripathy, S ^c,e   Kwong, Dim Lee ^b,d,e   Yeo, Yee Chia ^a,e  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d The University of Texas at Austin   (United States)

^e ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRODES; MOSFET DEVICES; NICKEL ALLOYS; SILICA; TERBIUM ALLOYS;

ELECTRICAL DEGRADATION; GATE ELECTRODES; SILICIDATION; SILICIDE GATES;

OXIDATION;

EID: 33644806622     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2171827     Document Type: Article

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