Addressing key concerns for implementation of Ni FUSI into manufacturing for 45/32 nm CMOS

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 158-159

  Shickova, A ^b   Kauerauf, T ^b   Rotlischild, A ^a   Aoulaiche, M ^b   Sahhaf, S ^b   Kaczer, B ^a   Veloso, A ^a   Torregiani, C ^b   Pantisano, L ^a   Lauwers, A ^a   Zahid, M ^b,g   Rost, T ^c   Tigelaar, H ^c   Pas, M ^c   Fretwell, J ^d   McCormack, J ^d   Hoffmann, T ^a   Kerner, C ^a   Chiarella, T ^a   Brus, S ^a   Harada, Y ^e   Niwa, M ^e   Kaushik, V ^f   Maes, H ^b   Absil, P P ^a   Groeseneken, G ^b   Biesemans, S ^a   Kittl, J A ^c   more..

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c TEXAS INSTRUMENTS   (United States)

^d KLA TENCOR CORPORATION   (United States)

^e Matsushita

^f Matsushita ^*

^g LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

VLSI TECHNOLOGIES;

NICKEL;

NICKEL ALLOYS;

EID: 47249156488     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339765     Document Type: Conference Paper

References (16)

1. K. Takahashi et al., IEDM.91 (2004);
2. J. A. Kittl et al., VLSI, 72 (2005);
3. M. Terai et al., VLSI, 69 (2005);
4. W. P. Maszara et ai, IEDM, 367 (2002),
5. E. P Gusev et al., IEDM, 79 (2004);
6. C. Cabrai Jr. et al., IEDM, 231 (2005);
7. H. Yu et al., VLSI, 120 (2006);
8. T. Hoffmann et al., IEDM, 269 (2006);
9. Y. Tsuchiya et al., IEDM, 231 (2006);
10. Y. Nishida et al., VLSI, 216 (2006);
11. A. Lauwers et al., IEDM, 646 (2005);
12. A. Veloso et al., VLSI, 116 (2006);
13. M. Saitoh et al., VLSI, 162 (2006);
14. P. Zhao et al., Electrochem. & S. S. Lett. 111 (9), 2006;
15. S. Zafar et al., VLSI. (2006);
16. B. H. Lee et al., Materials Today (June 2006).