Mechanisms of arsenic segregation to the Ni2 Si SiO2 interface during Ni2 Si formation

Applied Physics Letters

Volumn 87, Issue 18, 2005, Pages 1-3

  Pawlak, M A ^a,b   Janssens, T ^b   Lauwers, A ^b   Vantomme, A ^a   Vandervorst, W ^a   Maex, K ^a   Kittl, J A ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c TEXAS INSTRUMENTS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CRYSTALLOGRAPHY; INTERFACES (MATERIALS); POLYSILANES; SEGREGATION (METALLOGRAPHY);

RECRYSTALLIZATION ANNEALING; SECONDARY ION MASS SPECTROSCOPY; SEGREGATION MECHANISMS;

ARSENIC;

EID: 27344431576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2125124     Document Type: Article

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