Characteristics of Ni/Gd FUSI for NMOS gate electrode applications

IEEE Electron Device Letters

Volumn 28, Issue 7, 2007, Pages 555-557

  Lee, Bongmook ^a   Biswas, Nivedita ^a   Novak, Steven R ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

Band edge work function; Fully silicided (FUSI) gate; Metal gate electrodes; n MOSFET; Ni FUSI; Nickel gadolinium (Ni Gd); Work function extraction

Indexed keywords

BAND EDGE; GATE STACK; METAL GATE ELECTRODES;

DIELECTRIC MATERIALS; ELECTRODES; GADOLINIUM; GATES (TRANSISTOR); NICKEL; WORK FUNCTION;

MOS DEVICES;

EID: 34447272019     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.897889     Document Type: Article

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