Effects of P on amorphous chemical vapor deposition Ru-P alloy films for Cu interconnect liner applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 974-979

  Shin, Jinhong ^a   Kim, Hyun Woo ^a   Agapiou, Kyriacos ^a   Jones, Richard A ^a   Hwang, Gyeong S ^a   Ekerdt, John G ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION STRENGTHS; ALLOY FILMS; ASPECT RATIO TRENCHES; BARRIER FAILURE; BARRIER PERFORMANCE; CHEMICAL VAPORS; CU DIFFUSION; CU INTERCONNECTS; CU(TI) FILM; DIFFUSIVITY; FILM MICROSTRUCTURES; FIRST-PRINCIPLES DENSITY FUNCTIONAL CALCULATIONS; PHYSICAL VAPOR DEPOSITION (PVD); POLY CRYSTALLINE; SINGLE-SOURCE PRECURSORS; STEP COVERAGE;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; COPPER ALLOYS; CRYSTAL GROWTH; DIMENSIONAL STABILITY; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; HEALTH; LITHOGRAPHY; METALLIC FILMS; METALLIZING; MOLECULAR BEAM EPITAXY; NONMETALS; OPTICAL INTERCONNECTS; PHOSPHORUS; PHYSICAL VAPOR DEPOSITION; PROBABILITY DENSITY FUNCTION; RUTHENIUM ALLOYS; STEEL ANALYSIS; TANTALUM; TANTALUM COMPOUNDS; VAPORS;

COPPER;

EID: 46449126475     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2832360     Document Type: Article

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