Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materials

Microelectronic Engineering

Volumn 60, Issue 1-2, 2002, Pages 125-132

  Lanckmans, F ^a,b   Maex, K ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

C V; Cu+ drift; Low k dielectric; Porous inorganic material; SiOxCy

Indexed keywords

CAPACITANCE; COPPER; DIFFUSION IN SOLIDS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROUS SILICON; VOLTAGE MEASUREMENT;

POROUS INORGANIC MATERIALS; THERMAL OXIDE LAYERS;

DIELECTRIC MATERIALS;

EID: 0036132728     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00588-3     Document Type: Conference Paper

References (9)

1. Multilevel interconnections for ULSI and GSI era
2. 2
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4. Diffusion of metals in silicon dioxide
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6. Kinetics of copper drift in PECVD dielectrics
7. Barrier behaviour of plasma deposited silicon oxide and nitride against Cu diffusion
8. Diffusion of metals in polymers