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Microelectronic Engineering

Volumn 76, Issue 1-4, 2004, Pages 70-75

Correlation between barrier integrity and TDDB performance of copper porous low-k interconnects

(6) Tokei, Zs a Patz, M b Schmidt, M c Iacopi, F a,d Demuynck, S a Maex, K a,d

a IMEC (Belgium)

b JSR CORPORATION (Japan)

c INFINEON TECHNOLOGIES AG (Germany)

d UNIVERSITY OF LEUVEN (Belgium)

Author keywords

Barrier deposition; Barrier integrity; iPVD; p MSQ; Porous low k; Porous MSQ; Reliability; TDDB

Indexed keywords

CORRELATION METHODS; DIELECTRIC PROPERTIES OF SOLIDS; DIFFUSION; PERFORMANCE; PHYSICAL VAPOR DEPOSITION; POROUS MATERIALS; QUALITY CONTROL; RELIABILITY;

BARRIER DEPOSITION; BARRIER INTEGRITY; BARRIER MATERIALS; PRECURSORS;

OPTICAL INTERCONNECTS;

EID: 4544331203 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2004.07.057 Document Type: Conference Paper

Times cited : (17)

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