Interfacial diffusion studies of Cu/(5 nm Ru)/Si structures physical vapor deposited vs electrochemically deposited Cu

Journal of the Electrochemical Society

Volumn 152, Issue 11, 2005, Pages

  Arunagiri, Tiruchirapalli N ^a,c   Zhang, Yibin ^a,c   Chyan, Oliver ^a,c   Kim, Moon J ^a,c,d   Hurd, Trace Q ^b,c  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c ELECTROCHEMICAL SOCIETY   (United States)

^d The University of Texas at Dallas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION BARRIERS; INTERFACIAL DIFFUSION; INTERFACIAL STABILITY; SURFACE AREAS;

COPPER; DIFFUSION; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; ELECTROPLATING; ETCHING; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); OPTICAL MICROSCOPY; PHYSICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SILICON; SURFACE CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROCHEMISTRY;

EID: 27944505607     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2039939     Document Type: Article

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