Characterization of time-dependent dielectric breakdown in intrinsic thin SiO2

Microelectronics Journal

Volumn 27, Issue 7, 1996, Pages 657-665

  Suehle, John S ^a   Chaparala, Prasad ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; ELECTRIC FIELDS; SILICA; THIN FILMS;

DIELECTRIC BREAKDOWN; VOLTAGE STRESS CONDITIONS;

DIELECTRIC FILMS;

EID: 0030269147     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00103-4     Document Type: Article

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