TiN, TaN and WxN as diffusion barriers for Cu on SiO 2: Capacitance-voltage, leakage current, and triangular-voltage-sweep tests after bias temperature stress

Thin Solid Films

Volumn 449, Issue 1-2, 2004, Pages 158-165

  Kizil, Huseyin ^a   Steinbrüchel, Christoph ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Bias temperature stress; Capacitance voltage; Copper; Diffusion barrier; TaN; TiN; Triangular voltage sweep; WN

Indexed keywords

ADHESION; CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; LEAKAGE CURRENTS; MASS SPECTROMETRY; MOS CAPACITORS; SILICA; STRESS ANALYSIS; STRUCTURE (COMPOSITION); THERMAL EFFECTS; THERMODYNAMIC STABILITY; VOLTAGE MEASUREMENT;

BIAS TEMPERATURE STRESS; CAPACITANCE-VOLTAGE; DIFFUSION BARRIERS; TRIANGULAR-VOLTAGE-SWEEP;

TITANIUM NITRIDE;

EID: 1042304389     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.10.111     Document Type: Article

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