Correlation and interaction between sidewall passivation and chamber walls deposition during silicon gate etching

Contributions to Plasma Physics

Volumn 44, Issue 5-6, 2004, Pages 413-425

  Kogelschatz, M ^a   Cunge, G ^b   Joubert, O ^b   Valuer, L ^b   Sadeghi, N ^a  

^a UNIV GRENOBLE ALPES   (France)

^b CEA GRENOBLE   (France)

Author keywords

Passivation layer; Plasma composition; Plasma reactor; Silicon etching

Indexed keywords

ABSORPTION SPECTROSCOPY; CHLORINE COMPOUNDS; DEPOSITION; LIGHT ABSORPTION; OPTICAL EMISSION SPECTROSCOPY; PASSIVATION; PLASMA ETCHING; SILICON COMPOUNDS; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHAMBER WALLS; CHEMICAL COMPOSITIONS; GATE ETCHING; MILD ETCHING; PASSIVATION LAYER; PLASMA COMPOSITION; PLASMA REACTORS; REACTOR WALLS; SIDEWALL PASSIVATION; SILICON ETCHING;

MASS SPECTROMETRY;

EID: 5644294565     PISSN: 08631042     EISSN: None     Source Type: Journal    
DOI: 10.1002/ctpp.200410082     Document Type: Conference Paper

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