Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Wong, Man Hoi ^a   Wu, Feng ^a   Mates, Thomas E ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIFFRACTION; DRAIN CURRENT; ELECTRON DIFFRACTION; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PLASMAS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; SURFACES; TRANSISTORS;

CONVERGENT BEAM ELECTRON DIFFRACTIONS; DEVICE PERFORMANCES; EX-SITU; GROWTH INTERRUPTIONS; HIGH ELECTRON MOBILITIES; IN-SITU; MAXIMUM OSCILLATION FREQUENCIES; POLARITY INVERSIONS; SMALL SIGNAL PERFORMANCES; SOURCE CURRENTS; SOURCE VOLTAGES; STEP FLOWS; SUBSTRATE TEMPERATURES;

GALLIUM ALLOYS;

EID: 56349150077     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009669     Document Type: Article

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