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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1562-1567

Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN/GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

(8) Poblenz, C a Waltereit, P a Rajan, S a Mishra, U K a Speck, J S a Chin, P b Smorchkova, I b Heying, B b

a University of California (United States)

b NORTHROP GRUMMAN CORPORATION (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN LAYERS; POWER ADDED EFFICIENCY (PAE); POWER DENSITIES;

ALUMINUM NITRIDE; ELECTRON MOBILITY; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

NUCLEATION;

EID: 31144456592 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1943443 Document Type: Article

Times cited : (55)

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