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Volumn 33, Issue 23, 1997, Pages 1987-1989

Growth of low resistivity p-type GaN by metal organic chemical vapour deposition

Author keywords

Chemical vapour deposition; Gallium nitride; Semiconductor growth

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; HALL EFFECT; MAGNESIUM; MAGNETIC FIELD MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

EID: 0031556706     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971257     Document Type: Article
Times cited : (20)

References (17)
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  • 4
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    • AMANO, H., KITO, M., HIRAMATSU, K., and AKASAKI. I.: 'p-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation', Jpn. J. Appl. Phys., 1989, 28, pp. L2112-L12214
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    • Amano, H.1    Kito, M.2    Hiramatsu, K.3    Akasaki, I.4
  • 5
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    • Growth and luminescence properties of Mg-doped GaN prepared by MOVPE
    • AMANO, H., KITO, M., HIRAMATSU, K., and AKASAKI, I.: 'Growth and luminescence properties of Mg-doped GaN prepared by MOVPE', J. Electrochem. Soc., 1990, 137, pp. 1639-1641
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    • Amano, H.1    Kito, M.2    Hiramatsu, K.3    Akasaki, I.4
  • 7
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    • Thermal annealing effects on p-type Mg-doped GaN films
    • NAKAMURA, S., MUKAI. T., SENOH. M., and IWASA. N.: 'Thermal annealing effects on p-type Mg-doped GaN films', Jpn. J. Appl. Phys., 1992, 31, pp. L139-142
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    • Nakamura, S.1    Mukai, T.2    Senoh, M.3    Iwasa, N.4
  • 8
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    • Hole compensation mechanism of p-type GaN films
    • NAKAMURA, S., IWASA, N., SENOH, M., and MUKAI, T.: 'Hole compensation mechanism of p-type GaN films'. Jpn. J. Appl. Phys., 1992, 31, pp. 1258-1266
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1258-1266
    • Nakamura, S.1    Iwasa, N.2    Senoh, M.3    Mukai, T.4
  • 9
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    • Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
    • GÖTZ, W., JOHNSON, N.M., WALKER, J., BOUR, O.P., AMANO, H., and AKASAKI, I.: 'Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1995, 67, pp. 2666-2668
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 2666-2668
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  • 10
    • 0025791827 scopus 로고
    • Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n juntion LED
    • AKASAKI, I., AMANO, H., KITO, M., and HIRAMATSU, K.: 'Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n juntion LED', J. Lumin., 1991, 48 & 49, pp. 666-670
    • (1991) J. Lumin. , vol.48-49 , pp. 666-670
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  • 11
    • 0026241977 scopus 로고
    • Highly p-typed Mgdoped GaN films grown with GaN buffer layers
    • NAKAMURA, S., SENOH, M., and MUKAI, T.: 'Highly p-typed Mgdoped GaN films grown with GaN buffer layers', Jpn. J. Appl. Phys., 1991, 30, pp. L1708-L1711
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  • 12
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    • The effects of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition
    • GRUDOWSKI, P.A., HOLMES, A.L., EITING, C.J., and DUPUIS. R.D.: 'The effects of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition', Appl. Phys. Lett., 1996, 69, pp. 3626-3628
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  • 13
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    • HOLMES, A.L., FERTITTA, K.G., CIUBA, F.J., and DUPUIS, R.D.: 'X-ray diffraction studies of high-quality GaN heteroepitaxial films grown by metal organic chemical vapour deposition'. Electron. Lett., 1994, 30, pp. 1252-1254
    • (1994) Electron. Lett. , vol.30 , pp. 1252-1254
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  • 15
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    • note
    • Variable-temperature Hall-effect data and analysis courtesy of Dr. Werner Götz of Hewlett Packard OED
  • 17
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.