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note
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Variable-temperature Hall-effect data and analysis courtesy of Dr. Werner Götz of Hewlett Packard OED
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16
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0031212886
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Characteristics of Mg-doped GaN by metalorgaic chemical vapor deposition
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EITING, C.J., GRUDOWSKI, P.A., PARK, J.S., LAMBERT, D.J.H., SHELTON, B.S., and DUPUIS, RD.: 'Characteristics of Mg-doped GaN by metalorgaic chemical vapor deposition', J. Electrochem. Soc., 1997, 144, (8), pp. L219-L221
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17
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