The growth of N-face GaN by MOCVD: Effect of Mg, Si, and In

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 150-158

  Tavernier, P R ^a   Margalith, T ^a   Williams, J ^a   Green, D S ^a   Keller, S ^a   DenBaars, S P ^a   Mishra, U K ^a   Nakamura, S ^a   Clarke, D R ^a  

^a University of California   (United States)

Author keywords

A1. Impurities; A1. N face; A1. Polarity; A3. Metalorganic chemical vapor deposition; B1. GaN

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; DEPOSITION; INDIUM; ION BEAMS; MAGNESIUM PRINTING PLATES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OPTICAL MICROSCOPY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

N-FACE; POLARITY;

GALLIUM NITRIDE;

EID: 1342285525     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.01.023     Document Type: Article

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