MBE-grown AlGaN/GaN HEMTs on SiC

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 3, 2004, Pages 732-737

  Rajan, Siddharth ^a   Chakraborty, Arpan ^a   Mishra, Umesh K ^a   Poblenz, Christiane ^a   Waltereit, Patrick ^a   Speck, James S ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GALLIUM NITRIDE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON CARBIDE;

BUFFER LEAKAGE; CARBON DOPING; CARBON-DOPED BUFFERS; POWER ADDED EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 24144480580     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002752     Document Type: Conference Paper

References (11)

1. J. S. Moon, M. Micovic, P. Janke, P. Hashimoto, W.-S. Wong, R. D. Widman, L. McCray, A. Kurdoghlian, and C. Nguyen, "GaN/AlGaN HEMTs operating at 20GHz with a continuous-wave power density >6W/mm," Electronics Letters, vol. 37, p. 528, 2001.
2. D. S. Katzer and S. C. Binari and D. F. Storm and J. A. Roussos and B. V. Shanabrook and E. R. Glaser, "MBE growth of AlGaN/GaN HEMTs with high power density," Electronics Letters, vol. 38, p. 1740, 2002.
3. N. G. Weimann, M. J. Manfra, and T. Wächtler, "Unpassivated AlGaN-GaN HEMTs with Minimal RF Dispersion Grown by Plasma-Assisted MBE on Semi-Insulating 6H-SiC Substrates," IEEE Electron Device Letters, vol. 24, p. 57, 2003.
4. R. Behtash, H. Tobler, M. Neuburger, A. Schurr, H. Leier, Y. Cordier, F. Semond, F. Natali, and J. Massies, "AlGaN/GaN HEMTs on Si(111) with 6.6W/mm output power density," Electronics Letters, vol. 39, p. 626, 2003.
5. S. Rajan, P. Waltereit, C. Poblenz, A. Chakraborty, S. J. Heikman, J, S, Speck, and U. K. Mishra, "Power Performance of AlGaN/GaN HEMTs grown on SiC by Plasma-Assisted MBE", IEEE Electron Dewice Letters, vol. 25(5), p. 247, 2004.
6. 4 doping of GaN in rf plasma MBE," J. App. Phys., vol 95, p. 8456, 2004.
7. C. Poblenz, P. Waltereit, S. Rajan, U. K. Mishra, and J. S. Speck, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors, " J.Vac.Sc.Tech. B, vol. 22, p. 1145, 2004.
8. B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy," Appl. Phys. Lett., vol. 68, p. 643, 1996.
9. M. J. Manfra, N. G. Weimann, J. W. P. Hsu, L. N. Pfeiffer, and K. W. West, "Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates," Appl. Phys. Lett., vol. 81, p. 1456, 2002.
10. P. Waltereit, C. Poblenz, S. Rajan, U. K. Mishra, and J. S. Speck, "Growth of GaN buffer layers on 4H-SiC(0001) by plasma assisted molecular beam epitaxy for high mobility electron transistors," Appl. Phys. Lett., submitted for publication.
11. A. Chini, D. Buttari, R. Coffie, L. Shen, S. Heikman, A. Charaborty, S. Keller, U. K. Mishra, "Power and linearity characteristics of fi eld-plated recessed-gate AlGaN-GaN HEMTs," IEEE Electron Device Letters, vol. 25(5), p. 229, May 2004.