High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer

Journal of Crystal Growth

Volumn 248, Issue SUPPL., 2003, Pages 552-555

  Chowdhury, Uttiya ^a   Wong, Michael M ^a   Collins, Charles J ^a   Yang, Bo ^a   Denyszyn, Jonathan C ^a   Campbell, Joe C ^a   Dupuis, Russell D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

A1. Doping; A3. Low press. metalorganic vapor phase epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting III V materials; B3. Heterojunction semiconductor devices

Indexed keywords

ANTIREFLECTION COATINGS; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTODETECTORS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

SOLAR-BLIND DETECTORS (SBD);

QUANTUM EFFICIENCY;

EID: 0037291267     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01877-8     Document Type: Conference Paper

References (10)

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