GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2290-2292

  Zhang, Yun ^a   Yoo, Dongwon ^b   Limb, Jae Boum ^a   Ryou, Jae Hyun ^a   Dupuis, Russell D ^b   Shen, Shyh Chiang ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE BREAKDOWN; AVALANCHE GAINS; GAN SUBSTRATE; LINEAR GAIN; LOW-LEAKAGE CURRENT; MOCVD; ULTRA-VIOLET;

AVALANCHE PHOTODIODES; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; SEMICONDUCTOR DIODES;

GALLIUM ALLOYS;

EID: 56249099449     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778704     Document Type: Conference Paper

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