Performance of deep ultraviolet gan avalanche photodiodes grown by MOCVD

IEEE Photonics Technology Letters

Volumn 19, Issue 21, 2007, Pages 1744-1746

  Shen, Shyh Chiang ^a   Zhang, Yun ^a   Yoo, Dongwon ^a   Limb, Jae Boum ^a   Ryou, Jae Hyun ^a   Yoder, Paul D ^a   Dupuis, Russell D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Avalanche photodiode (APD); Deep ultraviolet (DUV); GaN; PIN

Indexed keywords

AT-WAVELENGTH; DEEP ULTRAVIOLET; DEEP UV; GAN SUBSTRATE; MOCVD; PIN DIODE; ULTRA-VIOLET;

AVALANCHE PHOTODIODES; GALLIUM NITRIDE; PHOTODIODES;

GALLIUM ALLOYS;

EID: 39349091815     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.906052     Document Type: Article

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