4H-SiC PIN recessed window avalanche photodiode

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn , Issue , 2007, Pages 517-518

  Liu, Han Din ^a   Mcintosh, Dion ^a   Bai, Xiaogang ^a   Pan, Huapu ^a   Liu, Mingguo ^a   Campbell, Joe C ^a  

^a University of Virginia   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNUAL MEETINGS; DARK CURRENTS; ELECTRO-OPTICS;

AVALANCHE PHOTODIODES; AVALANCHES (SNOWSLIDES); HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE; SNOW; WINDOWS;

QUANTUM EFFICIENCY;

EID: 51249085849     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/LEOS.2007.4382507     Document Type: Conference Paper

References (4)

1. A.O. Konstantinov, Q. Wahab, N. Nordell and U. Lindefelt, "Ionization rates and critical fields in 4H silicon carbide", Appl. Phys. Lett., Vol. 71, No. 1, pp. 90-92, 1997
2. T. Li, Beck A.L., Collins C; Dupuis R.D., Campbell J.C., Carrano J.C., Schurman M.J., Ferguson I.A., "Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode" Applied Physics Letters, v 75, n 16, 18 Oct. 1999, p 2421-3
3. Han-Din Liu, Xiangyi Guo, Mcintosh, D., Campbell, J.C. "Demonstration of ultraviolet 6H-SiC PIN avalanche photodiodes" IEEE Photonics Technology Letters, v 18, n 23, Dec. 2006, p 2508-10
4. Guo Xiangyi, Beck Ariane L., Li Xiaowei, Campbell Joe C., Emerson David, Sumakeris Joe, "Study of reverse dark current in 4H-SiC avalanche photodiodes" IEEE Journal of Quantum Electronics, v 41, n 4, April, 2005, p 562-567