Dielectric properties of implanted silicon layers: Influence of rapid thermal annealing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 197, Issue 1-2, 2002, Pages 60-66

  Partyka, J ^a   Wegierek, P ^a   Zukowski, P ^a   Sidorenko, Yu ^b   Szostak, Yu ^b  

^a LUBLIN UNIVERSITY OF TECHNOLOGY   (Poland)

^b BELARUSIAN STATE UNIVERSITY   (Belarus)

Author keywords

Capacitor; Defects; Dielectric properties; Ion implantation; Rapid thermal annealing; Silicon

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; DIELECTRIC PROPERTIES; ION BOMBARDMENT; RAPID THERMAL ANNEALING; SILICON;

JUMPING RECHARGING PROCESSES;

ION IMPLANTATION;

EID: 0036857135     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01304-6     Document Type: Article

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