Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

Semiconductors

Volumn 41, Issue 11, 2007, Pages 1300-1306

  Poklonski, N A ^a   Vyrko, S A ^a   Zabrodskii, A G ^b  

^a BELARUSIAN STATE UNIVERSITY   (Belarus)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36048961753     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782607110048     Document Type: Article

References (19)

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