High pressure growth of nanocrystalline silicon films

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 8, 2008, Pages 4211-4217

  Kumar, Sushil ^a   Gope, Jhuma ^a   Kumar, Aravind ^a   Parashar, A ^a   Rauthan, C M S ^a   Dixit, P N ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

Growth; PECVD; Silicon nano crystalline; Thin films

Indexed keywords

CRYSTALLINE FRACTIONS; CRYSTALLIZATION PROCESSES; DEPOSITION PRESSURES; ELECTRICAL CONDUCTIVITIES; ELECTRICAL PARAMETERS; FUNCTION OF PRESSURES; GASEOUS MIXTURES; GROWTH; H FILMS; HIGH PRESSURE GROWTHS; LASER RAMAN; NANOCRYSTALLINE PHASES; NANOCRYSTALLINE SILICON FILMS; OPTICAL BANDS; PECVD; PHOTOLUMINESCENCE PEAKS; RADIO FREQUENCIES; WEAK BONDS;

ARGON; ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; HYDROGEN; HYDROGEN BONDS; INERT GASES; LIGHT EMISSION; LUMINESCENCE; METALLIC FILMS; METALLIC GLASS; MICROSCOPIC EXAMINATION; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NANOCRYSTALLITES; NANOSTRUCTURED MATERIALS; NONMETALS; OPTICAL CONDUCTIVITY; PHOTOLUMINESCENCE; PLASMA DEPOSITION; PLASMA DIAGNOSTICS; PLASMAS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON; SPACE OPTICS; SURFACE DIFFUSION; THICK FILMS; THIN FILMS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 55949107863     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.AN20     Document Type: Conference Paper

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